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Room-temperature epitaxial growth of GaN on lattice-matched substrates by pulsed-laser deposition
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10.1063/1.2137876
/content/aip/journal/apl/87/22/10.1063/1.2137876
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2137876
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED images for (a) the surface after the UHV anneal and (b) the RT-grown GaN surface. AFM images for (c) the surface after the UHV anneal and (d) the RT-grown GaN surface.

Image of FIG. 2.
FIG. 2.

Evolution of RHEED specular spot intensity for RT-grown GaN grown at various rates.

Image of FIG. 3.
FIG. 3.

(a) An EBSD pole figure of the direction for RT GaN. (b) Crystal orientation distribution in the twist direction of the 20 nm thick RT GaN. The FWHM value for this peak is estimated to be 0.24°.

Image of FIG. 4.
FIG. 4.

Growth-rate dependence of the interfacial layer thickness for the RT- structures. The inset shows an example of the GIXR data and their fitting curve.

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/content/aip/journal/apl/87/22/10.1063/1.2137876
2005-11-22
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Room-temperature epitaxial growth of GaN on lattice-matched ZrB2 substrates by pulsed-laser deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2137876
10.1063/1.2137876
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