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RHEED images for (a) the surface after the UHV anneal and (b) the RT-grown GaN surface. AFM images for (c) the surface after the UHV anneal and (d) the RT-grown GaN surface.
Evolution of RHEED specular spot intensity for RT-grown GaN grown at various rates.
(a) An EBSD pole figure of the direction for RT GaN. (b) Crystal orientation distribution in the twist direction of the 20 nm thick RT GaN. The FWHM value for this peak is estimated to be 0.24°.
Growth-rate dependence of the interfacial layer thickness for the RT- structures. The inset shows an example of the GIXR data and their fitting curve.
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