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high- dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
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10.1063/1.2137897
/content/aip/journal/apl/87/22/10.1063/1.2137897
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2137897
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Figures

Image of FIG. 1.
FIG. 1.

(a)–(c) Cross-sectional high-resolution TEM images of grown on (100)Ge at 60, 225, and . (d)–(f) The corresponding plan-view TEM images taken in dark-field mode.

Image of FIG. 2.
FIG. 2.

Cross-sectional HRTEM images of grown at on (100)Ge with (a) and (b) interfacial layers. (c) and (d) show the respective dark-field plan-view images.

Image of FIG. 3.
FIG. 3.

Ge composition profiles obtained from EDX line scans of grown (a) without an interfacial layer and with interfacial layer of (b) and (c) . For clearer interpretation, the raw spectra were fitted with Boltzmann functions. The mean width values are indicated in the spectra.

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/content/aip/journal/apl/87/22/10.1063/1.2137897
2005-11-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: HfO2 high-k dielectrics grown on (100)Ge with ultrathin passivation layers: Structure and interfacial stability
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/22/10.1063/1.2137897
10.1063/1.2137897
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