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(a) Schematic cross section of the photodetector and (b) scanning electron microscopy view of the interdigited Ge on Si MSM photodetector.
Measured dark current of Ge MSM photodetectors.
Normalized pulse responses of the acquisition system and of a electrode spacing Ge MSM photodetector. The interdigited Ge on Si MSM photodetector response (dark line) is the result of the convolution between the intrinsic Ge photodetector characteristics and the best RC filter fit.
Frequency response of a electrode spacing Ge on Si MSM photodetector at a bias voltage, this for wavelengths equal to 1.31 and .
Measured bandwidths obtained from rf experiments at 1.31 and wavelengths and 1 and bias voltage for electrode spacings equal to 500, 700, 1000, and for Ge on Si MSM photodetectors.
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