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Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and operation
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10.1063/1.2139837
/content/aip/journal/apl/87/23/10.1063/1.2139837
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2139837

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic cross section of the photodetector and (b) scanning electron microscopy view of the interdigited Ge on Si MSM photodetector.

Image of FIG. 2.
FIG. 2.

Measured dark current of Ge MSM photodetectors.

Image of FIG. 3.
FIG. 3.

Normalized pulse responses of the acquisition system and of a electrode spacing Ge MSM photodetector. The interdigited Ge on Si MSM photodetector response (dark line) is the result of the convolution between the intrinsic Ge photodetector characteristics and the best RC filter fit.

Image of FIG. 4.
FIG. 4.

Frequency response of a electrode spacing Ge on Si MSM photodetector at a bias voltage, this for wavelengths equal to 1.31 and .

Tables

Generic image for table
Table I.

Measured bandwidths obtained from rf experiments at 1.31 and wavelengths and 1 and bias voltage for electrode spacings equal to 500, 700, 1000, and for Ge on Si MSM photodetectors.

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/content/aip/journal/apl/87/23/10.1063/1.2139837
2005-11-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2139837
10.1063/1.2139837
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