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(a) Diagram of the SU8∕doped-PMMA waveguide facet showing the theoretical intensity distribution of the fundamental TE mode. The waveguide is mounted on a silicon substrate with a -thick silica buffer layer . (b) Horizontal and (c) vertical cross sections of the waveguide, taken at the center of the facet, showing the theoretical TE mode profile (solid line), the observed intensity at the output facet (●), and the refractive index distribution (dashed line).
650 nm emission of PMMA∕Rh640 clad SU8 waveguide undergoing top-pumping at 575 nm with no signal beam present. Inset: Absorption (dotted line) of the PMMA∕Rh640 sample and emission (solid line) from the amplifier device.
Behavior of the amplifier gain with varying signal energy for a fixed pump intensity of .
Amplifier gain behavior with varying pump intensity (●) and device signal-to-noise ratio (엯) in the gain region. The signal energy is maintained at 2.5 nJ.
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