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A schematic illustration of the principle of fabricating transistors using spin-coating-induced edge effect (i, side view) and the specific process we used for TFT fabrication (ii, top view).
(a) A square array photoresist pattern and (b) an open square pattern which is templated from (a) by using the novel edge effect.
A channel of 400 nm wide between the source and drain electrodes is shown in (a), and a transistor fabricated by using such a channel is shown in (b).
Current-voltage characteristics of the TFTs fabricated with the source/drain electrodes defined by spin-coating-induced edge template. The transfer and output characteristics of the transistor with channel length and channel width are shown in (a) and (b), and that of the transistor with 400 nm channel length and channel width in (c) and (d).
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