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Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing
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10.1063/1.2140586
/content/aip/journal/apl/87/23/10.1063/1.2140586
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2140586
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Figures

Image of FIG. 1.
FIG. 1.

A schematic illustration of the principle of fabricating transistors using spin-coating-induced edge effect (i, side view) and the specific process we used for TFT fabrication (ii, top view).

Image of FIG. 2.
FIG. 2.

(a) A square array photoresist pattern and (b) an open square pattern which is templated from (a) by using the novel edge effect.

Image of FIG. 3.
FIG. 3.

A channel of 400 nm wide between the source and drain electrodes is shown in (a), and a transistor fabricated by using such a channel is shown in (b).

Image of FIG. 4.
FIG. 4.

Current-voltage characteristics of the TFTs fabricated with the source/drain electrodes defined by spin-coating-induced edge template. The transfer and output characteristics of the transistor with channel length and channel width are shown in (a) and (b), and that of the transistor with 400 nm channel length and channel width in (c) and (d).

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/content/aip/journal/apl/87/23/10.1063/1.2140586
2005-12-01
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2140586
10.1063/1.2140586
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