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The PL intensity dependence on annealing temperatures with different annealing procedures of SQWs. Filled symbols are used for RTA with 580 °C pretreatment and open symbols for direct high-temperature annealing after the growth of cap layers.
RT PL spectra of: (a) , (b) , (c) SQWs. The FWHMs are 34.4 meV, 60 meV, and 38 meV, respectively.
Schematic structure of the SQW ridge-waveguide laser.
L-I-V curve for a laser diode under RT cw operation. The output power from both facets is over 30 mW. The inset is a laser emission spectrum centered at 1586.6 nm for a driving current at 600 mA.
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