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GaAs-based room-temperature continuous-wave GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
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10.1063/1.2140614
/content/aip/journal/apl/87/23/10.1063/1.2140614
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2140614
/content/aip/journal/apl/87/23/10.1063/1.2140614
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/content/aip/journal/apl/87/23/10.1063/1.2140614
2005-12-01
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2140614
10.1063/1.2140614
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