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GaAs-based room-temperature continuous-wave GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
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10.1063/1.2140614
/content/aip/journal/apl/87/23/10.1063/1.2140614
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2140614
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The PL intensity dependence on annealing temperatures with different annealing procedures of SQWs. Filled symbols are used for RTA with 580 °C pretreatment and open symbols for direct high-temperature annealing after the growth of cap layers.

Image of FIG. 2.
FIG. 2.

RT PL spectra of: (a) , (b) , (c) SQWs. The FWHMs are 34.4 meV, 60 meV, and 38 meV, respectively.

Image of FIG. 3.
FIG. 3.

Schematic structure of the SQW ridge-waveguide laser.

Image of FIG. 4.
FIG. 4.

L-I-V curve for a laser diode under RT cw operation. The output power from both facets is over 30 mW. The inset is a laser emission spectrum centered at 1586.6 nm for a driving current at 600 mA.

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/content/aip/journal/apl/87/23/10.1063/1.2140614
2005-12-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/23/10.1063/1.2140614
10.1063/1.2140614
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