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X-ray measurements: (a) Reciprocal space diagram of the film orientation with respect to the YSZ substrate. The scans depicted in (c)–(e) are marked by arrows. (b) Direct space diagram of the film. points out of the paper plane, is tilted into it, and lies in the paper plane. (c) scan along the direction. (d) scan through . (e) Azimuth scan through an off-specular peak, .
Atomic force microscopy topography image at room temperature of a thin film grown on YSZ substrate. The scanning area is . The height scale, from bright to dark regions, is 25 nm.
(a) STM topography recorded on a thin film at 4.2 K. The scanning area is . The height scale, from bright to dark regions, is 15 nm. On grain we record tunneling spectra like the one reported in (c). On grain we record tunneling spectra like the one reported in (d). (b) conductance map of the same area at the energy , corresponding to the coherence peak in tunneling conductance spectra associated with the gap in this material. The brightest regions correspond to -axis oriented grains (high conductance at the energy with conductance ratio ) while the darkest regions correspond to -axis oriented regions (low conductance at energy , with conductance ratio ). The tunneling resistance is (, ). (c) Tunneling spectra recorded on -axis grains [brightest regions in (b)]. (d) Tunneling spectra recorded on -axis grains [darkest regions in (b)]. (e) Tunneling spectra recorded on most of the film surface [gray regions in (b)].
Magnetic field dependence of the tunneling spectra: normalized zero bias conductance as a function of the applied magnetic field perpendicular to the sample’s surface for a film grown off-axis on YSZ substrate (filled circles) and for a -axis film grown on a SiC substrate. In the inset the tunneling spectra are reported for different applied magnetic fields: 0, 0.2, and 1.5 T.
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