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Avalanche multiplication in AlGaN based solar-blind photodetectors
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10.1063/1.2140610
/content/aip/journal/apl/87/24/10.1063/1.2140610
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2140610
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current density vs voltage curves of a photodiode recorded at 300 K in the dark and upon UV illumination.

Image of FIG. 2.
FIG. 2.

Logarithmic plot of gain vs reverse bias (the corresponding photocurrent is shown on the right axis). Parameters for the fit (dashed line) are shown. An approximation of the electric field in the multiplication region according to the simulation is given as a top scale.

Image of FIG. 3.
FIG. 3.

Plots of the dark current density vs voltage for various temperatures showing a strong temperature dependence, characteristic of avalanche gain.

Image of FIG. 4.
FIG. 4.

Plot of the distribution of the electric field at various reverse biases.

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/content/aip/journal/apl/87/24/10.1063/1.2140610
2005-12-09
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Avalanche multiplication in AlGaN based solar-blind photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2140610
10.1063/1.2140610
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