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High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
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10.1063/1.2140874
/content/aip/journal/apl/87/24/10.1063/1.2140874
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2140874
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Figures

Image of FIG. 1.
FIG. 1.

Dark-field electron micrograph of nominally crack-free DBR with a GaN cap on Si (111) substrate. The interfaces appear to be quite sharp. The decrease in definition at the top of the picture is due to an increase in sample thickness and corresponding decrease in electron transparency.

Image of FIG. 2.
FIG. 2.

Optical reflectance of a: (a) DBR displaying 96.8% experimental and 96.1% theoretical (for ideal GaN SL) reflectance with a stop band centered at and (b) DBR with a GaN cap structure displaying 90.7% experimental and 91.7 theoretical (for ideal SL) reflectance with a stop band centered at .

Image of FIG. 3.
FIG. 3.

XRD scan of DBR/Si (111) substrate structure.

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/content/aip/journal/apl/87/24/10.1063/1.2140874
2005-12-05
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2140874
10.1063/1.2140874
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