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Single standing carbon nanotube array in gate holes using a silicon nitride cap layer
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10.1063/1.2142079
/content/aip/journal/apl/87/24/10.1063/1.2142079
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2142079
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic diagram for the growth of single standing CNTs in holes: (a) deposition on ; (b) wet etch to make holes in ; (c) annealing at to form Ni granules in the holes; and (d) growth of CNTs in the holes by PECVD.

Image of FIG. 2.
FIG. 2.

The resistivity of the Ni diffused plotted against annealing time. The resistance was measured in the vertical configuration.

Image of FIG. 3.
FIG. 3.

The SEM images of the CNTs grown in the various holes with different aperture sizes of (a): , (b) , and (c) .

Image of FIG. 4.
FIG. 4.

The SEM image of a single standing CNT array.

Image of FIG. 5.
FIG. 5.

The characteristics of a single standing CNT in a gate hole. The inset shows the Fowler–Nordheim plot.

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/content/aip/journal/apl/87/24/10.1063/1.2142079
2005-12-06
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Single standing carbon nanotube array in gate holes using a silicon nitride cap layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2142079
10.1063/1.2142079
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