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The schematic diagram for the growth of single standing CNTs in holes: (a) deposition on ; (b) wet etch to make holes in ; (c) annealing at to form Ni granules in the holes; and (d) growth of CNTs in the holes by PECVD.
The resistivity of the Ni diffused plotted against annealing time. The resistance was measured in the vertical configuration.
The SEM images of the CNTs grown in the various holes with different aperture sizes of (a): , (b) , and (c) .
The SEM image of a single standing CNT array.
The characteristics of a single standing CNT in a gate hole. The inset shows the Fowler–Nordheim plot.
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