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Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K
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10.1063/1.2142294
/content/aip/journal/apl/87/24/10.1063/1.2142294
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2142294
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Figures

Image of FIG. 1.
FIG. 1.

(a) A schematic representation of the 4H-SiC crystal structure. The small and large disks represent C and Si atoms, respectively. There are two substitutional donor sites, cubic (k) and hexagonal (hex). (b) A schematic representation of the electron excitation and capture producing THz emission in 4H-SiC devices, showing the nitrogen donor cubic sites (left), and hexagonal sites (right). The processes are: (1) electron excitation at the donor site via impact ionization, (2) electron capture via emission of acoustic phonons, (3) radiative THz transitions between long-lived states and ground states, and (4) electron relaxation to via acoustic phonon emission.

Image of FIG. 2.
FIG. 2.

(a) Top panel: THz emission spectrum of nitrogen doped 4H-SiC devices with a pumping current of 1 A at 4 K. Bottom panel: regular pattern of the FTIR interferogram corresponding to narrow emission peaks. (b) Evolution of the THz emission intensity with increasing pumping current at 4 K.

Image of FIG. 3.
FIG. 3.

(a) Top: THz emission spectrum of nitrogen doped 4H-SiC devices with a pumping current of 2 A at 80 K. Bottom panel: regular pattern of the corresponding interferogram. (b) Evolution of the THz emission spectra with a pumping current of 2 A.

Image of FIG. 4.
FIG. 4.

(Color online) Light output vs current (red dashed lines) and (black solid lines) characteristics of a typical device at 4 and 80 K. The equivalent peak power is determined from the measured average power divided by the duty cycle of the electrical pulses.

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/content/aip/journal/apl/87/24/10.1063/1.2142294
2005-12-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Compact electrically pumped nitrogen-doped 4H-SiC terahertz emitters operating up to 150 K
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2142294
10.1063/1.2142294
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