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Band gap tuning of quantum sticks using low-energy ion-implantation-induced intermixing
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10.1063/1.2142330
/content/aip/journal/apl/87/24/10.1063/1.2142330
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2142330
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Normalized PL spectra at 20 K of intermixed QS samples as a function of the phosphorus ion implantation dose. (b) The samples were annealed at 650°C for 120 s. Photoluminescence peak wavelength shift vs the ion dose.

Image of FIG. 2.
FIG. 2.

Evolution of the integrated PL intensity of QS samples with the phosphorus ion implantation dose. The dotted and the dashed lines indicate the integrated intensity for the only-annealed and as-grown samples, respectively.

Image of FIG. 3.
FIG. 3.

Evolution of the PL linewidth of QS samples with the phosphorus ion implantation dose. The dotted line corresponds to the PL linewidth for the only-annealed sample.

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/content/aip/journal/apl/87/24/10.1063/1.2142330
2005-12-07
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2142330
10.1063/1.2142330
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