1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope
Rent:
Rent this article for
USD
10.1063/1.2143127
/content/aip/journal/apl/87/24/10.1063/1.2143127
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2143127
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) The current-voltage characteristic of the structure at room temperature. The inset graphs show the top and cross-sectional views of the MITT. (b) The AFM top view image of the MITT device.

Image of FIG. 2.
FIG. 2.

The barrier height is plotted as a function of the effective electronic mass obtained from the intercept of the Schottky plot. The inset graph shows the Schottky plot at 300 K under the condition and the energy band diagram of Schottky emission.

Image of FIG. 3.
FIG. 3.

The barrier height is plotted as a function of the effective electronic mass obtained from the slope of FN plot and the intercept of the Schottky plot. The inset graphs show the FN plot at 300 K and the energy band diagram of FN tunneling.

Image of FIG. 4.
FIG. 4.

The characteristics of the MITT. The inset graph shows the band bending in the tunnel insulator under positive gate bias.

Loading

Article metrics loading...

/content/aip/journal/apl/87/24/10.1063/1.2143127
2005-12-07
2014-04-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of tunnel insulator in metal/insulator tunnel transistors fabricated by atomic force microscope
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2143127
10.1063/1.2143127
SEARCH_EXPAND_ITEM