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XPS peak spectra of Si (left side) and Hf (right side) according to mole fractions (, 0.5, 0.75) in as-grown Hf-silicate films. The binding energies of Si and Hf of the silicate films are indicated in the spectra.
XPS peak spectra of Hf after annealing at temperatures of 800 °C (left side) and 900 °C (right side) according to mole fractions (, 0.5, 0.75) of Hf silicate films.
MEIS spectra for Hf silicate films with different mole fractions : (a) , (b) , (c) . Left side shows the change in O and Si peaks with mole fractions and annealing temperatures of 800 and 900 °C. Right side is the change in the Hf peak corresponding to the O and Si peaks in the upper line.
Change NEXAFS spectra in Hf-silicate films with (a) high mole fraction and (b) low mole fraction at different annealing temperatures of 700, 800, and 900 °C.
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