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Time-resolved experimental study of carrier lifetime in GaN epilayers
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10.1063/1.2146061
/content/aip/journal/apl/87/24/10.1063/1.2146061
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2146061
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

LITG decay time vs grating spacing measured in the GaN Sample A1. Diffusion coefficient and carrier lifetime are indicated. Inset: LITG decay kinetics for three grating spacings indicated.

Image of FIG. 2.
FIG. 2.

Spectrally integrated PL decay kinetics (points) of four GaN samples and two-exponential fit (solid lines) using lifetimes extracted from LITG experiments.

Image of FIG. 3.
FIG. 3.

Carrier diffusion length (a) and diffusion coefficient (b) vs carrier lifetime in GaN epilayers on sapphire substrates grown under various conditions. The lines are a guide for the eyes.

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/content/aip/journal/apl/87/24/10.1063/1.2146061
2005-12-08
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Time-resolved experimental study of carrier lifetime in GaN epilayers
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/24/10.1063/1.2146061
10.1063/1.2146061
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