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Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors
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10.1063/1.2138806
/content/aip/journal/apl/87/25/10.1063/1.2138806
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2138806
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized switch-on transient decay obtained at 300 K for: (엯) A present work device , a device (described in Ref. 6) under (◻) , (∎) , , and , and finally a device (described in Ref. 7) under and . In each case, the continuous line represents the best fit to Eq. (1). Filled circles (●) indicate the normalized transient decay current of a present work device measured at 400 K; the dotted line indicates the corresponding best fit to Eq. (1).

Image of FIG. 2.
FIG. 2.

Transient decay of a present work device recorded at different temperatures in the range of 200–350 K.

Image of FIG. 3.
FIG. 3.

Arrhenius plot of Eq. (2) for the computation of the activation energy corresponding to the switch-on transient decay characteristics plotted in Fig. 2.

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/content/aip/journal/apl/87/25/10.1063/1.2138806
2005-12-15
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Switch-on overshoot transient decay mechanism in polycrystalline silicon thin-film transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2138806
10.1063/1.2138806
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