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Electronic properties of InN nanowires
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10.1063/1.2141927
/content/aip/journal/apl/87/25/10.1063/1.2141927
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2141927
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Figures

Image of FIG. 1.
FIG. 1.

(a). FE-SEM micrograph of catalyst-free InN nanowires. (b) FE-SEM image of a representative NW device spanning between metal contacts at the top and bottom. The inset shows a schematic of the backgated FET configuration.

Image of FIG. 2.
FIG. 2.

Structural characterizations of the InN NWs. (a) EDS indicated the presence of In and N in the sample. The Ar is due to the Ar flooding of the growth chamber during temperature ramp-up. (b) XRD spectrum corresponding to hexagonal wurtzite InN nanowires. (c) TEM image with electron diffraction pattern (inset). (d) Micro-Raman spectroscopy of wurtzite InN NWs and the indexed active modes at room temperature. The peak with asterisk “*” denotes zone-boundary phonon of wurtzite InN.

Image of FIG. 3.
FIG. 3.

(a) Near-zero bias plot for (black) and (gray) for a representative device illustrating Ohmic behavior. (b) dependence at for the same device from (a). The sweep is taken first, as indicated by the arrows. The forward transconductance is 19.6% smaller than the reverse, the greatest disparity of the 41 devices reported in this study. (c) dependence at for a typical sample. Again, the sweep order is indicated by the arrows. (d) Multiple measurements at for a third device. is swept from . Sweep 1 is the initial sweep, sweep 2 is an instantaneous subsequent sweep, and sweep 3 is a subsequent sweep taken after a lag.

Image of FIG. 4.
FIG. 4.

(a) Scatter plot of mobility vs log carrier concentration for two growth-fabrication runs of InN NWs. There are a total of 41 NW samples plotted, 26 from the first run and 15 from the second run. Data from bulk epitaxially grown InN on sapphire (see Ref. 32 ) and GaN (see Refs. 32–35 ) substrates are included. The datapoints from samples used for temperature-dependence measurements are arrowed and labeled. (b) Temperature dependence of mobility for two InN NW samples. Sample 1 has a carrier concentration of and sample 2 of .

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/content/aip/journal/apl/87/25/10.1063/1.2141927
2005-12-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electronic properties of InN nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2141927
10.1063/1.2141927
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