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(a). FE-SEM micrograph of catalyst-free InN nanowires. (b) FE-SEM image of a representative NW device spanning between metal contacts at the top and bottom. The inset shows a schematic of the backgated FET configuration.
Structural characterizations of the InN NWs. (a) EDS indicated the presence of In and N in the sample. The Ar is due to the Ar flooding of the growth chamber during temperature ramp-up. (b) XRD spectrum corresponding to hexagonal wurtzite InN nanowires. (c) TEM image with electron diffraction pattern (inset). (d) Micro-Raman spectroscopy of wurtzite InN NWs and the indexed active modes at room temperature. The peak with asterisk “*” denotes zone-boundary phonon of wurtzite InN.
(a) Near-zero bias plot for (black) and (gray) for a representative device illustrating Ohmic behavior. (b) dependence at for the same device from (a). The sweep is taken first, as indicated by the arrows. The forward transconductance is 19.6% smaller than the reverse, the greatest disparity of the 41 devices reported in this study. (c) dependence at for a typical sample. Again, the sweep order is indicated by the arrows. (d) Multiple measurements at for a third device. is swept from . Sweep 1 is the initial sweep, sweep 2 is an instantaneous subsequent sweep, and sweep 3 is a subsequent sweep taken after a lag.
(a) Scatter plot of mobility vs log carrier concentration for two growth-fabrication runs of InN NWs. There are a total of 41 NW samples plotted, 26 from the first run and 15 from the second run. Data from bulk epitaxially grown InN on sapphire (see Ref. 32 ) and GaN (see Refs. 32–35 ) substrates are included. The datapoints from samples used for temperature-dependence measurements are arrowed and labeled. (b) Temperature dependence of mobility for two InN NW samples. Sample 1 has a carrier concentration of and sample 2 of .
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