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Low-temperature route to lateral growth of ZnO nanowires
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10.1063/1.2142090
/content/aip/journal/apl/87/25/10.1063/1.2142090
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2142090
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM image of the nanowires grown on an oxidized Si substrate. (b) Magnified SEM image of nanowires with spearlike tips. (c) TEM image.

Image of FIG. 2.
FIG. 2.

XRD pattern of ZnO nanowires.

Image of FIG. 3.
FIG. 3.

(a) TEM image of a nanowire. The upper inset is SAED; the lower inset is EDX. Scale bar: (b) HRTEM of the corresponding nanowire. Scale bar: .

Image of FIG. 4.
FIG. 4.

Raman spectrum of ZnO nanowires grown on an oxidized Si substrate. The excitation was done by a laser line.

Image of FIG. 5.
FIG. 5.

(a) SEM image of as-prepared samples fabricated without the introduction of oxygen. The inset is for EDX. (b) SEM image of ZnO nanowires around .

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/content/aip/journal/apl/87/25/10.1063/1.2142090
2005-12-13
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-temperature (∼250°C) route to lateral growth of ZnO nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2142090
10.1063/1.2142090
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