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Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals
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10.1063/1.2142092
/content/aip/journal/apl/87/25/10.1063/1.2142092
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2142092
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Figures

Image of FIG. 1.
FIG. 1.

Calculations of CM QE from time-resolved TA data illustrated using two traces measured for PbSe NCs at low pump intensity with photon energies (no CM; dashed line) and (CM producing excitons per NC; solid line).

Image of FIG. 2.
FIG. 2.

(a) CM QEs for CdSe (circles) and PbSe (squares) NCs as a function of excitation photon energy divided by . Arrows mark the onsets of CM. The dashed lines are linear fits used to calculate differential QEs. Inset: CM QEs for PbSe NCs measured over a wide range of excitation photon energies up to . (b) Main frame: TA time traces normalized at long time delays for CdSe NCs with energy gaps of (crosses and squares) and (circles) measured at low pump intensity using photon energies of (no CM; crosses) and (CM possible; squares and circles). Lines are double exponential fits obtained using as a fitting parameter and (single-exciton lifetime from Ref. 8). Inset: biexciton dynamics extracted from the TA traces (Ref. 13) measured with a pump at for the same samples: (squares) and (circles).

Image of FIG. 3.
FIG. 3.

(a) Bulklike, carrier effective-mass considerations indicate that in the case of similar electron and hole masses the onset of CM is (a), whereas it approaches (b) in the case for which the electron and hole masses are very dissimilar .

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/content/aip/journal/apl/87/25/10.1063/1.2142092
2005-12-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of electronic structure on carrier multiplication efficiency: Comparative study of PbSe and CdSe nanocrystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2142092
10.1063/1.2142092
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