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Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis
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10.1063/1.2143130
/content/aip/journal/apl/87/25/10.1063/1.2143130
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2143130
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Figures

Image of FIG. 1.
FIG. 1.

Plane-view PEELS-STEM images. The reference sample (a) was annealed at 1050 °C for 30 min under ambient. The other samples were obtained from the reference sample by further annealing ( ambient at 900 °C) for different durations: 30 min (b), 240 min (c). The original images have been recontrasted.

Image of FIG. 2.
FIG. 2.

(a) Evolution of PL bands as a function of the oxidization duration. The IR band (★) is due to Si rich oxide. The red band (∎) is due to size effects. (b) Red band energy position (dots) as a function of the NCs mean diameter, compared to the free exciton band gap (dashed line) and to the bound exciton band gap in the presence of a bond (solid line), from Ref. 18.

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/content/aip/journal/apl/87/25/10.1063/1.2143130
2005-12-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of Si nanocrystal memory devices obtained by ion beam synthesis
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2143130
10.1063/1.2143130
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