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Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
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10.1063/1.2146065
/content/aip/journal/apl/87/25/10.1063/1.2146065
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2146065
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Distribution of electrons over energies in the CNT without phonon scattering; , , source/drain doping . White curves are the positions of the conduction (higher) and the valence (lower) band edges.

Image of FIG. 2.
FIG. 2.

(Color online) Distribution of electrons with phonon scattering ; other parameters same as in Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Current spectrum (logarithmic scale) with phonon scattering. Parameters same as in Fig. 2.

Image of FIG. 4.
FIG. 4.

Current vs gate voltage, for : Without scattering (dashed line); with phonon scattering (solid line with circles). The doping density is .

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/content/aip/journal/apl/87/25/10.1063/1.2146065
2005-12-13
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2146065
10.1063/1.2146065
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