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SEM images of the nanoporous GaN film. The inset shows the high-magnification image. The average diameter of the pores in GaN is about and the pores are uniformly distributed over the GaN surface.
Cross-sectional SEM image of the overgrown GaN on the nanoporous GaN template. The inset shows the formation of nanoscale air bridges.
AFM micrographs of (a) overgrown GaN and (b) as-grown GaN epilayer. The overgrown GaN shows improved surface morphology with reduced surface pits density.
(a) Room-temperature micro-PL spectrum recorded from the overgrown GaN and reference as-grown GaN sample. The inset shows micro-PL peaks associated with near-band-edge transitions of GaN. (b) Room-temperature micro-Raman spectra of overgrown GaN and as-grown GaN under the same recording conditions. It shows clear redshift of the phonon from the overgrown GaN on a nanoporous template.
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