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Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
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10.1063/1.2147716
/content/aip/journal/apl/87/25/10.1063/1.2147716
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2147716
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Figures

Image of FIG. 1.
FIG. 1.

SEM images of the nanoporous GaN film. The inset shows the high-magnification image. The average diameter of the pores in GaN is about and the pores are uniformly distributed over the GaN surface.

Image of FIG. 2.
FIG. 2.

Cross-sectional SEM image of the overgrown GaN on the nanoporous GaN template. The inset shows the formation of nanoscale air bridges.

Image of FIG. 3.
FIG. 3.

AFM micrographs of (a) overgrown GaN and (b) as-grown GaN epilayer. The overgrown GaN shows improved surface morphology with reduced surface pits density.

Image of FIG. 4.
FIG. 4.

(a) Room-temperature micro-PL spectrum recorded from the overgrown GaN and reference as-grown GaN sample. The inset shows micro-PL peaks associated with near-band-edge transitions of GaN. (b) Room-temperature micro-Raman spectra of overgrown GaN and as-grown GaN under the same recording conditions. It shows clear redshift of the phonon from the overgrown GaN on a nanoporous template.

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/content/aip/journal/apl/87/25/10.1063/1.2147716
2005-12-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2147716
10.1063/1.2147716
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