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Temperature dependence of the return current in stacks fabricated by self-planarizing process
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10.1063/1.2149169
/content/aip/journal/apl/87/25/10.1063/1.2149169
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2149169

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic view and (b) photograph of a stack.

Image of FIG. 2.
FIG. 2.

characteristics of a self-planarized stack (Sample No. 1) at 25, 40, 60, and .

Image of FIG. 3.
FIG. 3.

Temperature dependences of the critical currents , , and return currents for four stacks with slightly different critical currents. The solid lines are the AB relation, and dotted lines show the calculated results with Zappe theory. In fitting the data, we use the parameters as listed in Table I.

Image of FIG. 4.
FIG. 4.

Temperature dependence of the normalized -axis resistance of the stack (No. 4). The solid line is the Heine relation.

Tables

Generic image for table
Table I.

Junction parameters estimated using a four-terminal measurement technique.

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/content/aip/journal/apl/87/25/10.1063/1.2149169
2005-12-14
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Temperature dependence of the return current in Bi2Sr2CaCu2Ox stacks fabricated by self-planarizing process
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2149169
10.1063/1.2149169
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