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Nitride-mediated epitaxy of self-assembled nanowires on (001)Si
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10.1063/1.2149970
/content/aip/journal/apl/87/25/10.1063/1.2149970
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2149970
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SEM image of NWs on blank (001)Si formed by RDE at .

Image of FIG. 2.
FIG. 2.

SEM image of NWs on nitride-capped (001)Si formed by RDE at .

Image of FIG. 3.
FIG. 3.

TEM images of Type- NWs on nitride-capped (001)Si: (a) Bright-field image and (b) [002] dark-field image. Inset in (b) is the electron diffraction pattern corresponding to (a).

Image of FIG. 4.
FIG. 4.

Bright-field image of Type- NWs on nitride-capped (001)Si. The inset is an atomic resolution image showing the cross section of a NW along the elongated direction. The dotted line denotes the Type-B twin-related interface.

Image of FIG. 5.
FIG. 5.

(a) Plots of length and width of islands vs island area and (b) the TEM image of one end of a Type- NW on nitride-capped (001)Si.

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/content/aip/journal/apl/87/25/10.1063/1.2149970
2005-12-15
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitride-mediated epitaxy of self-assembled NiSi2 nanowires on (001)Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2149970
10.1063/1.2149970
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