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Lattice distortion in nanostructured porous silicon
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10.1063/1.2149973
/content/aip/journal/apl/87/25/10.1063/1.2149973
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2149973

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional view of PS grown onto monocrystalline Si (bottom, left). Different areas of the PS layer were analyzed in detail. The formation current density was . The specimen is oriented along the [110] zone axis.

Image of FIG. 2.
FIG. 2.

Cross-sectional view of PS grown onto monocrystalline Si (bottom, left). Different areas of the PS layer were analyzed in detail. The formation current density was of . The specimen is oriented along the [110] zone axis.

Image of FIG. 3.
FIG. 3.

Frequency distribution of the interplanar distance of the Si grains that compose PS for the [1 -1 1] and [1 -1 -1] directions.

Image of FIG. 4.
FIG. 4.

Images of PS in two different zones (left), corresponding diffraction patterns (middle), and restored images obtained by IFFT image processing (right).

Tables

Generic image for table
Table I.

Interplanar distances (Å) and angles of the power spectra maxima from the Si crystals that compose PS at increasing distances from the interface.

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/content/aip/journal/apl/87/25/10.1063/1.2149973
2005-12-14
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lattice distortion in nanostructured porous silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2149973
10.1063/1.2149973
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