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Triply resonant semiconductor microcavity consisting of: A GaAs substrate, three cavities strongly coupled through DBR1 and DBR2, and enclosed by a bottom DBR and a top DBR. The mirrors are made of 13 pairs of layers of GaAs and AlAs.
(a) Dielectric structure of the triply resonant microcavity structure. Air on the left. (b) Calculated electric field as a function of the position inside the microcavity structure. Incident field from the left.
Reflectivity as a function of the incident angle, calculated by transfer matrix calculation. Here, the QW excitonic oscillator strength is set to zero.
(a) Reflectivity as a function of the incident angle in the strong exciton-photon coupling regime. The intensity scale is the same as in Fig. 3. The detuning is set so that the phase matching for the interbranch scattering (solid arrow) is for all beams at zero degree ( with respect to the bare-cavity energy). Typical intrabranch scattering (dotted arrow) observed in single 2D cavity structures. (b) The detuning is set so that the phase matching is found for nonzero angles, allowing for the generation of entangled polariton states.
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