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Impact of N on the lasing characteristics of quantum well lasers emitting from 1.29 to
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10.1063/1.2151249
/content/aip/journal/apl/87/25/10.1063/1.2151249
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2151249
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence on the lasing wavelength of the threshold current density and external differential quantum efficiency for LDs.

Image of FIG. 2.
FIG. 2.

Dependence on N content of the internal quantum efficiency and internal optical losses of LDs. Solid and hollow symbols correspond to GaAs and GaAsN barriers, respectively.

Image of FIG. 3.
FIG. 3.

Dependence of the internal transparency current density on N content of LDs. The connecting lines are a guide to the eye.

Image of FIG. 4.
FIG. 4.

Calculated dependence on N of the transparency carrier density and radiative transparency current density for LDs with 70-Å-thick QWs. The connecting lines are a guide to the eye.

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/content/aip/journal/apl/87/25/10.1063/1.2151249
2005-12-16
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of N on the lasing characteristics of GaInNAs∕GaAs quantum well lasers emitting from 1.29 to 1.52μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2151249
10.1063/1.2151249
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