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Dependence on the lasing wavelength of the threshold current density and external differential quantum efficiency for LDs.
Dependence on N content of the internal quantum efficiency and internal optical losses of LDs. Solid and hollow symbols correspond to GaAs and GaAsN barriers, respectively.
Dependence of the internal transparency current density on N content of LDs. The connecting lines are a guide to the eye.
Calculated dependence on N of the transparency carrier density and radiative transparency current density for LDs with 70-Å-thick QWs. The connecting lines are a guide to the eye.
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