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Cadmium telluride bulk crystal as an ultrafast nonlinear optical switch
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10.1063/1.2151256
/content/aip/journal/apl/87/25/10.1063/1.2151256
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2151256

Figures

Image of FIG. 1.
FIG. 1.

Kerr signal from CdTe[111] crystal as a function of time. Laser setting is the same as the one employed at the measurement of . Internal gate energy is . Crystal thickness is . Solid line is a fitting curve.

Image of FIG. 2.
FIG. 2.

Principle of real-time 3D measurement. Two polarizers in signal pass are set in crossed nicols and a gate pulse is polarized at an angle of 45° toward a signal pulse. Sample is composed of glasses on which Ag is evaporated. Two Ag-coated cover glasses are set and fixed on Ag-coated glass plate.

Image of FIG. 3.
FIG. 3.

(Color) Real-time 3D images. Signal and gate pulse energies are 0.71 and ∕pulse, respectively, and repetition rate is . Spot size is not evaluated. (a) No gate pulse (b)–(d) Gate pulse at 0, 450, and delay position, respectively.

Tables

Generic image for table
Table I.

Measured nonlinear optical properties of Si, GaAs, and CdTe bulk crystals with different orientations. Signal and gate pulses are injected concentrically along the direction of crystal orientation indicated by suffix. Polarization of a gate pulse is in a direction of [010] or [001] for [100] crystals and or for [111] crystals. The is defined as , where is refractive index, is spot size, and is wavelength. The is the value at internal gate energy of . The is calculated using for . The errors of measurements are estimated as .

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/content/aip/journal/apl/87/25/10.1063/1.2151256
2005-12-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Cadmium telluride bulk crystal as an ultrafast nonlinear optical switch
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/25/10.1063/1.2151256
10.1063/1.2151256
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