1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Characteristics of laminate films containing incorporated N as a function of stack structure and annealing temperature
Rent:
Rent this article for
USD
10.1063/1.2147718
/content/aip/journal/apl/87/26/10.1063/1.2147718
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2147718
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

MEIS spectra of -thick laminate films annealed at various temperatures from 700 to in a ambient. AHAH/Si and HAHA/Si represent the structure of and , respectively.

Image of FIG. 2.
FIG. 2.

XPS spectra of N in AHAH/Si (left side) and HAHA/Si (right side) films after annealing at various temperatures from in a ambient.

Image of FIG. 3.
FIG. 3.

NEXAFS spectra of the N K edge in AHAH/Si (left side) and HAHA/Si (right side) films after various annealing temperatures from in a ambient. The sharp peak is caused by molecular and the broad peaks are related to chemically N bonded with the film.

Image of FIG. 4.
FIG. 4.

MEIS spectra of -thick laminate films after additional annealing at a temperature of in a ambient . The peak caused by N is drastically decreased after in both the AHAH/Si and HAHA/Si films. The insets are N XPS spectra of the laminate films after the additional annealing treatment .

Loading

Article metrics loading...

/content/aip/journal/apl/87/26/10.1063/1.2147718
2005-12-23
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characteristics of HfO2–Al2O3 laminate films containing incorporated N as a function of stack structure and annealing temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2147718
10.1063/1.2147718
SEARCH_EXPAND_ITEM