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MEIS spectra of -thick laminate films annealed at various temperatures from 700 to in a ambient. AHAH/Si and HAHA/Si represent the structure of and , respectively.
XPS spectra of N in AHAH/Si (left side) and HAHA/Si (right side) films after annealing at various temperatures from in a ambient.
NEXAFS spectra of the N K edge in AHAH/Si (left side) and HAHA/Si (right side) films after various annealing temperatures from in a ambient. The sharp peak is caused by molecular and the broad peaks are related to chemically N bonded with the film.
MEIS spectra of -thick laminate films after additional annealing at a temperature of in a ambient . The peak caused by N is drastically decreased after in both the AHAH/Si and HAHA/Si films. The insets are N XPS spectra of the laminate films after the additional annealing treatment .
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