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Fast-forming boron-oxygen-related recombination center in crystalline silicon
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Image of FIG. 1.
FIG. 1.

Measured open-circuit voltage decay due to illumination of an MIS solar cell made on boron-doped Cz-Si. The logarithmic time scale reveals a fast initial exponential decay, taking place on a time scale of , followed by a subsequent asymptotic slow decay process. Full recovery of the initial value is possible by annealing at for in the dark.

Image of FIG. 2.
FIG. 2.

Measured temperature dependence of the defect generation rate of the fast-forming defect for Cz-Si materials of different doping concentrations . Open symbols refer to carrier lifetime measurements on silicon wafers, whereas filled symbols correspond to open-circuit voltage measurements on silicon solar cells.

Image of FIG. 3.
FIG. 3.

Measured temperature dependence of the value (applied voltage necessary to create 50% of the maximum defect concentration) and calculated curves expected for a defect activation due to a charge-state change caused by the shift of the quasi-Fermi level across an energy level at .

Image of FIG. 4.
FIG. 4.

Measured decrease in of a Cz-Si MIS solar cell with a base doping concentration of as a function of in the dark. For each measurement of the solar cell is illuminated with light from a halogen lamp with an intensity of for . The formation of the fast-forming defect can intentionally be triggered (, circles) or suppressed (, squares). For both voltages, the slow defect forms in the same way, proving that the fast and the slow defect formation are decoupled processes.


Generic image for table
Table I.

Properties of the boron-oxygen-related recombination centers in crystalline silicon corresponding to the fast initial and the subsequent asymptotic slow degradation process.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast-forming boron-oxygen-related recombination center in crystalline silicon