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Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range
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View: Figures


Image of FIG. 1.
FIG. 1.

The wavelengths and energies of (1) the fundamental band gap of (GaIn)(NAs) (dashed), (2) the gain peak for a gain maximum of (solid), and (3) the low intensity luminescence peak (dotted). Both material series are shown. A sample from the series specified by 40% In content contains less nitrogen than the corresponding sample that yields the same emission wavelength but belongs to the series specified by constant strain .

Image of FIG. 2.
FIG. 2.

Gain curves at (solid) and (dotted) for 40% In. Parameters are: solid lines , 0.55% N, ; dotted lines , 2.30% N, . The inset shows the effect of different strain in samples yielding a gain peak of at a wavelength of . Dotted: , ; dashed: , ; dash dotted: , . The curve closely resembles the curve.

Image of FIG. 3.
FIG. 3.

(a) Carrier density required to achieve a peak gain of and a peak gain of in the 40% In samples (solid) and the samples (dashed). A peak gain of is just below the appearance of the second transition in the sample. The wavelength on the abscissa is the gain peak wavelength for a peak gain of . That way, values from the same structure appear vertically on top of each other although the peak gain wavelength shifts with excitation intensity, compare Figs. 2 and 4. (b) Carrier loss currents for the 40% In samples at a peak gain of and at a peak gain of . The figure shows microscopically calculated values for the Auger (, solid) and the radiative recombination current (, dotted). (c) The same as in (b), here for the samples.

Image of FIG. 4.
FIG. 4.

(a) Shift of the gain peak to shorter wavelengths with increasing gain for the (dotted) and structure (solid) of the 40% indium series. (b) Corresponding linewidth enhancement factor at the gain peak. Lines are guides for the eye.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1550 nm range