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Noninterfacial-nitride formation ohmic contact mechanism in Si-containing metallizations on heterostructures
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10.1063/1.2149968
/content/aip/journal/apl/87/26/10.1063/1.2149968
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2149968
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Figures

Image of FIG. 1.
FIG. 1.

Contact resistance and specific contact resistivity of metallization. Si incorporation is shown to enhance ohmic performance of metallization.

Image of FIG. 2.
FIG. 2.

STEM micrographs of (a) , (b) , and (c) schemes annealed at for . Extent of nitride formation is seen to be dependent on Si content and dispersion. Suppression of nitride formation and larger Al–Au–Si intermetallic inclusions are observed with increasing amount of silicon. The dotted white lines in the micrographs demarcate the interface.

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/content/aip/journal/apl/87/26/10.1063/1.2149968
2005-12-23
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti∕Al∕Mo∕Au metallizations on AlGaN∕GaN heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2149968
10.1063/1.2149968
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