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A schematic illustration of MICNM capacitor structure. (a) The Nb bottom electrode was deposited by sputtering and the Ni catalyst dots were also formed on predefined locations. (b) The MWCNTs were vertically grown from the Ni catalyst dots using dc-PECVD. (c) The film was deposited by PECVD. (d) The Al layer was formed by angular thermal evaporation .
SEM image of a single MICNM structure. (a) A single vertical MWCNT was grown on a selected position. (b) The layer was deposited on the MWCNT. (c) The Al layer was formed by angular evaporation. The scale bar corresponds to 500 nm.
SEM image and electrical characteristics of MICNM devices. (a) SEM image of MWCNTs on a dot catalyst pattern. (b) SEM image of MWCNTs on a line catalyst pattern. The scale bar corresponds to . (c) Capacitance with varying applied bias. (d) Leakage current density with varying applied bias.
SEM image of a nanoscale capacitor. (a) SEM image of an e-beam exposed pattern in thick PMMA resist. (b) Capacitor arrays using a square pattern. (c) Capacitor arrays using a diameter circle pattern. The scale bar corresponds to 500 nm.
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