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Effect of strain on -channel metal-oxide-semiconductor field-effect-transistor current enhancement using stress-modulated silicon nitride films
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10.1063/1.2149987
/content/aip/journal/apl/87/26/10.1063/1.2149987
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2149987

Figures

Image of FIG. 1.
FIG. 1.

The stress variations of the implanted LPCVD silicon nitride samples before and after the RTA process (, ).

Image of FIG. 2.
FIG. 2.

The normalized peak areas of Si–N from FTIR spectra are plotted for all implanted LPCVD silicon nitride samples, before and after RTA process (, ). The schematic changes of S–N bonds on front side of wafer are also drawn in the inset.

Image of FIG. 3.
FIG. 3.

The drain current of -channel MOSFET with -implanted silicon nitride cap layer is improved as compared with bulk Si devices.

Tables

Generic image for table
Table I.

The stress variations of the silicon-nitride films after the first and second implantation processes. The drain current enhancements of -channel MOSFET devices with stress-modulated films by ion implantation are also observed.

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/content/aip/journal/apl/87/26/10.1063/1.2149987
2005-12-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of strain on p-channel metal-oxide-semiconductor field-effect-transistor current enhancement using stress-modulated silicon nitride films
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2149987
10.1063/1.2149987
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