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The stress variations of the implanted LPCVD silicon nitride samples before and after the RTA process (, ).
The normalized peak areas of Si–N from FTIR spectra are plotted for all implanted LPCVD silicon nitride samples, before and after RTA process (, ). The schematic changes of S–N bonds on front side of wafer are also drawn in the inset.
The drain current of -channel MOSFET with -implanted silicon nitride cap layer is improved as compared with bulk Si devices.
The stress variations of the silicon-nitride films after the first and second implantation processes. The drain current enhancements of -channel MOSFET devices with stress-modulated films by ion implantation are also observed.
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