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Periodic pillar structures by Si etching of multilayer islands
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic illustration of the sample structure, and (b) AFM image of the sample morphology before KOH etching. The white ellipse identifies a double-island defect. The inset shows a height profile across the marked doubled islands.

Image of FIG. 2.
FIG. 2.

SEM image of the sample after KOH etching (a) top view, and (b) top-side view. The inset in (a) shows the zoomed-in top view of a single pillar structure. The ellipse in (a) and (b) indicates the double closely spaced pillar structure.

Image of FIG. 3.
FIG. 3.

Schematic illustration of the growth of closely spaced double islands: (a) Spatial distribution of the local chemical potential after the growth of thick (dotted line) and thin (solid line) spacer layer, (b) formation of the double islands, (c) growth of the double islands, the solid black circles represent adatoms, and (d) fully developed double islands.

Image of FIG. 4.
FIG. 4.

(a) XTEM image of a pillar structure after KOH etching. (b) and (c) Schematic profiles of pillar structures after KOH etching without and with the effect of tensile strain on the Si etching rate, respectively.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Periodic pillar structures by Si etching of multilayer GeSi∕Si islands