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(a) core-level XPS-Spectra of untreated (circles) and hydroxylated (squares) AlN and GaN. For GaN, an enhanced surface oxidation is observed. (b) core-level peaks for hydroxylated as well as APTES- and ODTMS-modified AlN. The inset shows a schematic of SAM formation on the surface (R: Remaining alkyl chain for ODTMS, amino group for APTES).
(a) core-level XPS spectra of the AlN surface after hydroxylation and after deposition of an APTES SAM. The shoulder indicates the presence of amino groups. (b) Magnification of (a) for APTES-modified AlN. Deconvolution (dashed lines) reveals two contributions of the amino tail group.
AFM image of hydroxylated (a) and APTES-modified (b) GaN, showing the typical morphology due to two-dimensional growth. No silane agglomeration can be observed. (c) TPD spectra of ODTMS fragments , and (57 amu, 69 amu, and 83 amu) for ODTMS-modified GaN. Spectra are vertically shifted.
Fluorescence image of alexa fluor 488-labeled single-stranded DNA after hybridization on patterned APTES-functionalized GaN. Dark regions represent areas of a degraded APTES-SAM.
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