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Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
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10.1063/1.2150586
/content/aip/journal/apl/87/26/10.1063/1.2150586
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2150586
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Mobility vs electric field for and (inset). An arrow shows the decrease in HfSiON thickness. Peak mobility shows a larger dependence on HfSiON thickness scaling. Hole mobility seems to be less impacted by HfSiON EOT scaling.

Image of FIG. 2.
FIG. 2.

EOT vs peak and high field electron mobility. Increased impact of scaling on peak mobility is observed in the larger slope of the EOT vs mobility curve. mobility is almost constant for the entire range of EOTs studied here.

Image of FIG. 3.
FIG. 3.

XPS results for HfSiON as a function of physical thickness. The Si–N bonding is more intense in thinner HfSiON films. The increased Si–N bonds in thinner films degrade peak mobility (as shown in Fig. 2) due to enhanced Coulombic scattering from the Si–N at the interface.

Image of FIG. 4.
FIG. 4.

Positive bias measurements for the HfSiON films at a constant voltage stress of . After of stress at room temperature, shifts less than for the HfSiON with a EOT.

Image of FIG. 5.
FIG. 5.

XRD results for fully processed (including S/D anneal of ) HfSiON. HfSiON crystallization is seen in the appearance of monoclinic and tetragonal peaks at , 52°. Film crystallization is a function of HfSiON thickness. Thinner films seem to remain amorphous. The symbols in the figure represent phases for monoclinic and tetragonal . TiN peaks are from the metal cap.

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/content/aip/journal/apl/87/26/10.1063/1.2150586
2005-12-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2150586
10.1063/1.2150586
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