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Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
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10.1063/1.2152110
/content/aip/journal/apl/87/26/10.1063/1.2152110
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2152110
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Moiré fringes revealing the presence of a TD. Fourier filtered image revealing solely (b) the GaN and (c) InN. In (b) two extra half planes and the edge component of the Burgers vector have been indicated in the GaN.

Image of FIG. 2.
FIG. 2.

General view of the QDs along the zone axis. The white circles in the magnified images show clearly TDs placed in the middle of the InN QDs.

Image of FIG. 3.
FIG. 3.

(a) Bright-field XTEM images recorded under two beam conditions for (a) and (b) near the zone axis showing the pure edge character of the TD.

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/content/aip/journal/apl/87/26/10.1063/1.2152110
2005-12-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nucleation of InN quantum dots on GaN by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2152110
10.1063/1.2152110
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