Full text loading...
Schematic of the device structure to detect lateral conduction in a self-assembled monolayer (SAM). It consists of two dimensional array of pockets embedded in -well silicon substrate. The ratio of areas of and regions has been varied.
Cyclic voltammetry (CyV) of Fc-BzOH attached to and substrates with the right and left insets showing the respective device schematics. The voltages and correspond to the redox potentials of the Fc-BzOH attached to and substrates, respectively.
Oxidation current density from CyV of Fc-BzOH on the device structures with varying ratios of the areas of and regions. Two peaks correspond to the redox of the molecules through the two separate routes namely, and with redox potentials and , respectively. The inset shows the existence of two independent routes for the redox of the molecules attached on the structure.
(a) Schematic showing existence of two different conduction paths (vertical and lateral) for molecules attached on the device structures. The molecules on region have two routes to oxidize, higher potential but kinetically faster vertical path, and lower potential but kinetically slower lateral path. (b) Oxidation current from CyV (normalized with respect to scan rate) of Fc-BzOH on the device structure at different scan rates showing the emergence of second peak at faster scan rates. There is just one oxidation peak at the lowest scan rate . The inset shows oxidation current from CyV of Fc-BzOH on just diodes at different scan rates.
Article metrics loading...