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Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity
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10.1063/1.2158018
/content/aip/journal/apl/87/26/10.1063/1.2158018
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158018

Figures

Image of FIG. 1.
FIG. 1.

(0,0) and (1,0) RHEED spot intensity during the growth of BaSrO on top of the layer. The Sr barrier layer was prepared by exposure at to a Sr flux of (sample 1a). Times of opening and closing the Ba and Sr shutters, timing of the specular RHEED spot maxima, and the time of introduction are indicated. The inset shows the timing of the RHEED oscillation maxima vs their index, and extraction of the phase shift, . is obtained as the x-intercept of a straight line, obtained from a linear fit through the data points.

Image of FIG. 2.
FIG. 2.

(a) RHEED oscillation phase shift vs amount of Sr deposited for various barrier recipes. (b) Si XPS spectrum of sample 1b, fitted with three contributing spectra: HF-dipped Si, , and Ba EEL in the BSO layer.

Image of FIG. 3.
FIG. 3.

RHEED image (Si ⟨110⟩ azimuth) of a 2 ML BSO∕Si(100) sample, using the same Sr barrier recipe as for sample 3b.

Tables

Generic image for table
Table I.

Summary of Sr barrier preparation conditions, Sr coverage, and RHEED pattern symmetry.

Generic image for table
Table II.

BSO thickness, EEL to Si peak intensity ratio, interfacial O amount (from XPS), and interfacial Sr (from RHEED oscillation phase shift), for three representative samples.

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/content/aip/journal/apl/87/26/10.1063/1.2158018
2005-12-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase of reflection high-energy electron diffraction oscillations during (Ba,Sr)O epitaxy on Si(100): A marker of Sr barrier integrity
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158018
10.1063/1.2158018
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