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Surface conductive layers on oxidized (111) diamonds
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10.1063/1.2158020
/content/aip/journal/apl/87/26/10.1063/1.2158020
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158020

Figures

Image of FIG. 1.
FIG. 1.

Typical temperature dependence of sheet resistivities measured on (a) a boron doped (111) and (b) a boron doped (100) films (samples A and C) in He atmosphere. In Fig. 1(a), asterisk represents the recovery of of sample A after exposed to air for .

Image of FIG. 2.
FIG. 2.

(a) Changes of sheet resistivities detected in air, in He atmosphere after annealing and in air after annealing. The vertical axis represents samples (left hand) and measurement conditions (right hand). Measurements were carried out at RT. Detection limit of our measurement system is . AFM top-view images of the boron doped (111) diamond film with (b) smooth (sample A) and (c) rough (sample B) surfaces are also shown.

Image of FIG. 3.
FIG. 3.

Relation between hole sheet concentration and Hall mobility of surface conductive layers on oxidized boron doped (111) diamond films (sample A), oxidized boron doped (111) diamond film (sample D), and oxidized natural IIa (111) diamond (sample E), after exposure to air at RT.

Tables

Generic image for table
Table I.

Samples used for Hall effect measurements. All sample surfaces were oxidized by boiling in a mixed acid solution.

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/content/aip/journal/apl/87/26/10.1063/1.2158020
2005-12-20
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface conductive layers on oxidized (111) diamonds
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158020
10.1063/1.2158020
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