Full text loading...
Typical temperature dependence of sheet resistivities measured on (a) a boron doped (111) and (b) a boron doped (100) films (samples A and C) in He atmosphere. In Fig. 1(a), asterisk represents the recovery of of sample A after exposed to air for .
(a) Changes of sheet resistivities detected in air, in He atmosphere after annealing and in air after annealing. The vertical axis represents samples (left hand) and measurement conditions (right hand). Measurements were carried out at RT. Detection limit of our measurement system is . AFM top-view images of the boron doped (111) diamond film with (b) smooth (sample A) and (c) rough (sample B) surfaces are also shown.
Relation between hole sheet concentration and Hall mobility of surface conductive layers on oxidized boron doped (111) diamond films (sample A), oxidized boron doped (111) diamond film (sample D), and oxidized natural IIa (111) diamond (sample E), after exposure to air at RT.
Samples used for Hall effect measurements. All sample surfaces were oxidized by boiling in a mixed acid solution.
Article metrics loading...