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A schematic diagram of the cross section of the device structure.
curve and curve measured on the AlGaN MQW diode. The inset shows the relationship in reverse bias range.
Electroluminescence spectra for the AlGaN MQW diode measured at different reverse bias.
Interband luminescence peak position (squares) and integrated electroluminescence intensity (circles) as functions of applied reverse bias for the AlGaN MQW diode.
Calculated ionization coefficient as a function of applied electric field for multi-quantum wells (, upper curve) and for bulk GaN (, lower curve).
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