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Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells
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10.1063/1.2158489
/content/aip/journal/apl/87/26/10.1063/1.2158489
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158489
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

A schematic diagram of the cross section of the device structure.

Image of FIG. 2.
FIG. 2.

curve and curve measured on the AlGaN MQW diode. The inset shows the relationship in reverse bias range.

Image of FIG. 3.
FIG. 3.

Electroluminescence spectra for the AlGaN MQW diode measured at different reverse bias.

Image of FIG. 4.
FIG. 4.

Interband luminescence peak position (squares) and integrated electroluminescence intensity (circles) as functions of applied reverse bias for the AlGaN MQW diode.

Image of FIG. 5.
FIG. 5.

Calculated ionization coefficient as a function of applied electric field for multi-quantum wells (, upper curve) and for bulk GaN (, lower curve).

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/content/aip/journal/apl/87/26/10.1063/1.2158489
2005-12-28
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Avalanche breakdown and breakdown luminescence of AlGaN multiquantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158489
10.1063/1.2158489
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