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Impact of N-induced potential fluctuations on the electron transport in Ga(As,N)
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10.1063/1.2158511
/content/aip/journal/apl/87/26/10.1063/1.2158511
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158511

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the resistivity for samples containing 0.8% N with different electron concentrations. The inset shows the mobility for the corresponding samples. The solid lines are least-square linear fits of the data.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the resistivity for samples containing 1.7% and 2.2% N. The inset shows the mobility for the corresponding samples. The solid lines are least-square linear fits of the data.

Image of FIG. 3.
FIG. 3.

Mean square N induced potential fluctuation as a function of the N concentration.

Tables

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Table I.

Properties of the investigated Ga(As,N) samples. Listed are the sample numbers (“a” indicates the annealed samples), the N concentration, the nominal Si concentration , and electron concentration and Hall mobility at 300 K. also shown are the calculated chemical potential from at 300 K, the activation energy obtained by the linear fits shown in Figs. 1 and 2, and the energy position of the percolation threshold .

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/content/aip/journal/apl/87/26/10.1063/1.2158511
2005-12-27
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of N-induced potential fluctuations on the electron transport in Ga(As,N)
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/26/10.1063/1.2158511
10.1063/1.2158511
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