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The experimental reflectivity is shown for the mold (upper curve) and the imprinted pattern (lower curve, vertically offset). The solid lines through the data points indicate the model fits described in the text. The long and short dashed lines are theoretical reflectivity curves for a smooth, infinitely thick Si and resist surface, respectively. The inset magnifies the reflectivity for the imprinted sample in the region of the asterisk near the three critical angles.
The cartoons on the left hand side of part (a) depict the structures of the mold and the imprinted pattern while the cartoon to the right indicates the equivalent layer model used to model the SXR data. The image in part (b) is a SEM cross section of the actual imprinted structure, indicating the line height and residual layer thickness from the SXR analysis are reasonable. Part (c) quantifies the line shape profiles for the mold and the imprint and shows how well the features in the imprint replicate the mold.
The scattering length density profile is shown as a function of distance through the structures. The cartoon at the top of the figure (the linewidths are not drawn as trapezoids and are not to scale) correlates which regions of the mold or imprint structure correspond to which regions of the scattering length density profile.
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