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Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM surface morphologies and RHEED diffraction pictures of 100 nm, and 1000-nm-thick samples after desorption of arsenic capping layer at high vacuum conditions. (a), (b) Smooth surface of 100-nm-thick sample; (c), (d) surface of 1000-nm-thick with MnAs dots seen as islands in AFM and three-dimensional diffraction features in RHEED image.

Image of FIG. 2.
FIG. 2.

(Color online) AFM surface morphologies of MnAs dots, on layers with different thicknesses: (a) 20 nm, sample 3; (b) 50 nm, sample 4; (c) 500 nm, sample 5; (d) cross-sectional TEM picture of a surface region of sample 5 showing individual MnAs dots; (e) high resolution TEM picture of an individual MnAs dot.

Image of FIG. 3.
FIG. 3.

(Color online) Photoemission spectra from the surface of 200-nm-thick layer before annealing (triangles), and after annealing with As capping (circles) resulting in the surface with MnAs dots; the difference spectrum is shown with squares.

Image of FIG. 4.
FIG. 4.

(a) AFM, and (b) MFM images (at room temperature) from the same surface region of annealed 200-nm-thick layer with MnAs dots on the surface.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Self-organized MnAs quantum dots formed during annealing of GaMnAs under arsenic capping