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curves measured at 300 [(a) and (b)] and [(c) and (d)] on - (filled symbols) and -type (empty symbols) capacitors. Data are shown for the as-grown (엯, ●), VUV-depassivated (◻, ∎), and -passivated (▵, ▴) samples, and samples subjected to the oxidizing PDA (◇, ◆).
Interface trap density as a function of energy in the Ge band gap determined from low- and high-frequency (open symbols) and (filled symbols) curves of - and -type MOS capacitors (the lower and upper halves of the band gap, respectively). The results are shown for the as-grown (엯, ●), VUV-depassivated (◻), -passivated (▵) samples, and samples subjected to PDA in (◇, ◆). The origin of the energy scale is at the top of the Ge valence band; error bars shown indicate the uncertainty mainly related to the inaccuracy of surface potential determination.
-band ESR spectra observed under an incident microwave power of on (100)Ge samples with nm thick insulating overlayers of the indicated composition. The signal at stems from a co-mounted calibration Si:P marker sample.
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