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Hole drift-mobility measurements in microcrystalline silicon
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10.1063/1.1984087
/content/aip/journal/apl/87/3/10.1063/1.1984087
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1984087

Figures

Image of FIG. 1.
FIG. 1.

Panels (a) and (b) show transient photocurrents taken at on Samples C and D for several applied bias voltages.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the average hole drift mobility for Samples C and D; was evaluated at a displacement∕field ratio . A typical hole drift mobility for extrapolated to this value of is shown for reference.

Image of FIG. 3.
FIG. 3.

Fittings of the bandtail multiple-trapping model to the transient photocharge measurements for Samples C (panel a) and D (panel b).

Tables

Generic image for table
Table I.

Multiple-trapping fitting parameters.

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/content/aip/journal/apl/87/3/10.1063/1.1984087
2005-07-12
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hole drift-mobility measurements in microcrystalline silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1984087
10.1063/1.1984087
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