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Growth switching sequences of shutters and valves for source materials used for growth of double heterostructures. is the exposure time (20, 60, 90, 120, and 150 s) on InP surface during a growth stop prior to growth at the lower interface ( on InP).
RHEED patterns of the (100) InP surface along (a)  and (b) azimuthal directions after a 20 s exposure to , and of the (100) surface along (c)  and (d) azimuthal directions after a 20 s exposure to flux, respectively.
(Color online). Symmetric (004) reciprocal space maps of DHs with exposure times of 20 and 150 s at InP surface during growth stop prior to growth obtained using a incident beam along the  direction.
(Color) SIMS depth profiles of As and P for DHs with exposure times at InP surface during growth stop prior to growth. Note that only one P depth profile was included in this figure to preserve clarity. Negligible P diffusion into the layer was detected for all cases, and details of this process where exposure of InP surfaces tends to convert the surface to a mixed InAsP region can be found in Ref. 10 .
(a) Measured PCD data and (b) extracted low-level injection PCD lifetimes [Eq. (1) ] as a function of exposure time at interface I measured using 1670 nm excitation wavelength ( of is 1675 nm). A photon flux of approximately was maintained to ensure low-level injection conditions at 300 K (inset: 77 K with 1600 nm excitation wavelength). exposures of 20 and 60 s are not included in (a) to maintain clarity. The dashed line in (b) indicates the theoretical radiative and Auger recombination lifetime limits for with using Eq. (2) (see Ref. 12 ).
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