1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding
Rent:
Rent this article for
USD
10.1063/1.1995943
/content/aip/journal/apl/87/3/10.1063/1.1995943
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1995943
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of fabrication flow for the bonded structure.

Image of FIG. 2.
FIG. 2.

TEM image of a two-wafer-bonded structure after grind-back, etch-back, and deposition.

Image of FIG. 3.
FIG. 3.

TEM image of a four-wafer-bonded structure after grind-back, etch-back, and deposition.

Image of FIG. 4.
FIG. 4.

(a) and (b) Magnified TEM images of the second and third (middle and upper in Fig. 3) copper bonded layers, respectively.

Image of FIG. 5.
FIG. 5.

(a) and (b) OM images of surfaces after two- and four-silicon-layer stacking, respectively. The light gray areas in these figures represent copper surfaces, while the dark areas mean oxide surfaces.

Loading

Article metrics loading...

/content/aip/journal/apl/87/3/10.1063/1.1995943
2005-07-13
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Process development and bonding quality investigations of silicon layer stacking based on copper wafer bonding
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1995943
10.1063/1.1995943
SEARCH_EXPAND_ITEM