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Determination of thickness and lattice distortion for the individual layer of strained superlattice by high-angle annular dark-field scanning transmission electron microscopy
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10.1063/1.1995952
/content/aip/journal/apl/87/3/10.1063/1.1995952
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1995952
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Figures

Image of FIG. 1.
FIG. 1.

(a) Experimental HRTEM image of SLS taken along the axis. Simulated images of GaN and crystals thick at a defocus of are inset, together with atomic columns positions of Ga (large circles) and N (small circles). No difference can be distinguished between the and GaN layers. (b) Atomic-resolved experimental HAADF-STEM image of the SLS. The image was processed by noise filtering. Simulated images of GaN and crystals at are inset. The difference in the absolute intensities between the two compositions is readily observable.

Image of FIG. 2.
FIG. 2.

(a) Experimental HAADF-STEM image of SLS cladding deposited on the layer. 200 layers and 200 GaN SLS layers are clearly resolved. Dark bands indicated by white vertical lines are layers. (b) Enlarged image of a part in (a) and its FFT image. A low-pass mask filter is shown in the FFT image. (c) Low-frequency HAADF-STEM image. (d) Normalized HAADF-STEM image [(image b)-(image c)]. (e) Average filtered HAADF-STEM image. The thickness of the layers was determined according to the FWHM criterion in the line profile.

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/content/aip/journal/apl/87/3/10.1063/1.1995952
2005-07-14
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determination of thickness and lattice distortion for the individual layer of strained Al0.14Ga0.86N∕GaN superlattice by high-angle annular dark-field scanning transmission electron microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/87/3/10.1063/1.1995952
10.1063/1.1995952
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